elektronische bauelemente 2SD2150 3 a, 40 v npn plastic encapsulated transistor 6-nov-2009 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features excellent current-to-gain characteristics low collector saturation voltage, v ce(sat) =0.5v(max.) for i c / i b =2a/0.1a marking cfr cfs absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6 v collector current-continuous i c 3 a collector power dissipation p c 500 mw junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 40 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 20 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5 v, i c =0 dc current gain h fe * 180 - 560 v ce =2v, i c = 100ma collector-emitter saturation voltage v ce(sat) * - - 0.5 v i c =2a, i b = 100ma transition frequency f t * - 290 - mhz v ce =2v, i c =-500ma, f=100mhz collector output capacitance c ob - 25 - pf v cb =10v, i e =0, f=1mhz *pulse test: t p Q 300 s, Q 0.02 classification of hfe rank r s range 180-390 270-560 marking cfr cfs millimeter millimeter ref. min. max. ref. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 sot-89 a e c d b k h f g l j 1 2 3 4 b c e
elektronische bauelemente 2SD2150 3 a, 40 v npn plastic encapsulated transistor 6-nov-2009 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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